HN1B04FU audio frequency general purpos e amplifier applications q1: high voltage and high current : v ceo = 50v, i c = 150ma (max) z high h fe : h fe = 120~400 z excellent h fe linearity : h fe (i c = 0.1ma) / h fe (i c = 2ma) = 0.95 (typ.) q2: z high voltage and high current : v ceo = ? 50v, i c = ? 150ma (max) z high h fe : h fe = 120~400 z excellent h fe linearity : h fe (i c = ? 0.1ma) / h fe (i c = ? 2ma) = 0.95 (typ.) q1 absolute maximum ratings (ta = 25 c) marking characteristic symbol rating unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma weight: 6.8mg unit: mm 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
q2 absolute maximum ratings (ta = 25 c) equivalent circuit (top view) characteristic symbol rating unit collector-base voltage v cbo ? 50 v collector-emitter voltage v ceo ? 50 v emitter-base voltage v ebo ? 5 v collector current i c ? 150 ma base current i b ? 30 ma q1,q2 common absolute maximum ratings (ta = 25 c) characteristic symbol rating unit collector power dissipation p c * 200 mw junction temperature t j 125 c storage temperature range t stg ? 55~125 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. (?handling precautions?/?derating concept and methods?) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * total rating q1 electrical characteristics (ta = 25 c) characteristic symbol test circuit test condition min typ. max unit collector cut-off current i cbo D v cb = 60v, i e = 0 D D 0.1 a emitter cut-off current i ebo D v eb = 5v, i c = 0 D D 0.1 a dc current gain h fe (note) D v ce = 6v, i c = 2ma 120 D 400 collector-emitter saturation voltage v ce (sat) D i c = 100ma, i b = 10ma D 0.1 0.25 v transition frequency f t D v ce = 10v, i c = 1ma D 150 D mhz collector output capacitance c ob D v cb = 10v, i e = 0, f = 1mhz D 2 D pf q2 electrical characteristics (ta = 25 c) characteristic symbol test circuit test condition min typ. max unit collector cut-off current i cbo D v cb = ? 50v, i e = 0 D D ? 0.1 a emitter cut-off current i ebo D v eb = ? 5v, i c = 0 D D ? 0.1 a dc current gain h fe (note) D v ce = ? 6v, i c = ? 2ma 120 D 400 collector-emitter saturation voltage v ce (sat) D i c = ? 100ma, i b = ? 10ma D ? 0.1 ? 0.3 v transition frequency f t D v ce = ? 10v, i c = ? 1ma D 120 D mhz collector output capacitance c ob D v cb = ? 10v, i e = 0, f = 1mhz D 4 D pf note: h fe classification y (y): 120~240, gr (g): 200~400 ( ) marking symbol 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com HN1B04FU product specification please design the appropriate reliability upon reviewing the ty semiconductor reliability handbook
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